• DocumentCode
    796473
  • Title

    SAW characteristics of GaN with n+-GaN IDTs

  • Author

    Nishimura, K. ; Shigekawa, N. ; Yokoyama, H. ; Hohkawa, K.

  • Volume
    42
  • Issue
    1
  • fYear
    2006
  • Abstract
    GaN-based surface acoustic wave (SAW) filters with Ni/n+-GaN-based interdigital transducers (IDTs) were investigated. Their RF characteristics revealed a main peak and neighbouring sidelobes, which indicates that SAWs are successfully excited in the filters. The results mean that conductive GaN layers can be used for IDTs, substituting for metal layers
  • Keywords
    III-V semiconductors <GaN, n+-GaN IDTs, SAW characts.>; gallium compounds <GaN, n+-GaN IDTs, SAW characts.>; interdigital transducers <GaN, n+-GaN IDTs, SAW characts.>; surface acoustic wave filters <GaN, n+-GaN IDTs, SAW characts.>; GaN; GaN-based surface acoustic wave filters; Ni/n+-GaN-based interdigital transducers; RF characteristics; conductive GaN layers; main peak; metal layers; sidelobes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20063748
  • Filename
    1577624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=796473