• DocumentCode
    796887
  • Title

    Range of Secondary Eiectrons in Sapphiire

  • Author

    Harrity, John W.

  • Author_Institution
    Gulf Radiation Technology, a Division of Gulf Energy & Environmental Systems, Inc. San Diego, California
  • Volume
    17
  • Issue
    6
  • fYear
    1970
  • Firstpage
    200
  • Lastpage
    204
  • Abstract
    During irradiation tests on a Czochralski-grown single-crystal sapphire sample, a trapping phenomenon was observed which led to an apparent nonlinear dependence of the radiation-induced conductivity on dose rate. These data have been interpreted in terms of a minimum projected range of the secondary electrons generated by the primary beam. A range of about 1000 Ã… is calculated.
  • Keywords
    Aluminum; Charge transfer; Conducting materials; Conductivity; Electron beams; Electron traps; Ionization; Ionizing radiation; Space vector pulse width modulation; Thermistors;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1970.4325791
  • Filename
    4325791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=796887