• DocumentCode
    797067
  • Title

    The SIMEST: an EST structure without parasitic thyristor achieved using SIMOX technology

  • Author

    Sridhar, S. ; Baliga, B.J.

  • Author_Institution
    Power Semicond. Res. Centre, North Carolina State Univ., Raleigh, NC, USA
  • Volume
    31
  • Issue
    23
  • fYear
    1995
  • fDate
    11/9/1995 12:00:00 AM
  • Firstpage
    2048
  • Lastpage
    2050
  • Abstract
    A new emitter switched thyristor (EST) structure, in which the lateral N-channel MOSFET is isolated from the thyristor by using SIMOX technology to eliminate the parasitic thyristor, is presented. This structure is experimentally demonstrated to exhibit high voltage current saturation at large gate biases beyond the breakdown voltage of the lateral N-channel MOSFET and a lower on-state voltage drop than the dual channel EST
  • Keywords
    MOS-controlled thyristors; MOSFET; SIMOX; isolation technology; EST structure; SIMEST; emitter switched thyristor; high voltage current saturation; isolation technique; lateral N-channel MOSFET; parasitic-thyristor-free structure; thyristor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951374
  • Filename
    490632
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=797067