• DocumentCode
    797468
  • Title

    Perpendicular Anisotropy of Iron Nitride Thin Films Prepared by Ion-Assisted Vapor Deposition

  • Author

    Takahashi, S. ; Kishimoto, D. ; Kume, M. ; Matsuura, K. ; Kita, E. ; Tasaki, A.

  • Author_Institution
    Sanyo Electric Co., Ltd.
  • Volume
    6
  • Issue
    1
  • fYear
    1991
  • Firstpage
    59
  • Lastpage
    65
  • Abstract
    Iron nitride thin films with perpendicular magnetic anisotropy were prepared by ion-assisted vapor deposition. The films exhibited a large perpendicular magnetic anisotropy field (above 2.5 kOe). A columnar structure was found to grow normal to the substrate. The films consisted of paramagnetic ¿-Fe2N and ¿-Fe2-3N phases and ferromagnetic ¿-Fe and ¿´-Fe4N phases. The perpendicular anisotropy may be attributed mainly to the shape anisotropy of the perpendicularly oriented columnar structure and to the magnetic separation effect due to segregation of paramagnetic components along each column. It was also found that a large perpendicular anisotropy is obtained more easily by irradiation with a nitrogen ion beam at low angles such as 10° to 30° from the substrate, rather than at large angles such as 70°.
  • Keywords
    Anisotropic magnetoresistance; Chemical vapor deposition; Iron; Magnetic films; Magnetic separation; Nitrogen; Paramagnetic materials; Perpendicular magnetic anisotropy; Shape; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1991.4565107
  • Filename
    4565107