DocumentCode
797468
Title
Perpendicular Anisotropy of Iron Nitride Thin Films Prepared by Ion-Assisted Vapor Deposition
Author
Takahashi, S. ; Kishimoto, D. ; Kume, M. ; Matsuura, K. ; Kita, E. ; Tasaki, A.
Author_Institution
Sanyo Electric Co., Ltd.
Volume
6
Issue
1
fYear
1991
Firstpage
59
Lastpage
65
Abstract
Iron nitride thin films with perpendicular magnetic anisotropy were prepared by ion-assisted vapor deposition. The films exhibited a large perpendicular magnetic anisotropy field (above 2.5 kOe). A columnar structure was found to grow normal to the substrate. The films consisted of paramagnetic ¿-Fe2 N and ¿-Fe2-3 N phases and ferromagnetic ¿-Fe and ¿´-Fe4 N phases. The perpendicular anisotropy may be attributed mainly to the shape anisotropy of the perpendicularly oriented columnar structure and to the magnetic separation effect due to segregation of paramagnetic components along each column. It was also found that a large perpendicular anisotropy is obtained more easily by irradiation with a nitrogen ion beam at low angles such as 10° to 30° from the substrate, rather than at large angles such as 70°.
Keywords
Anisotropic magnetoresistance; Chemical vapor deposition; Iron; Magnetic films; Magnetic separation; Nitrogen; Paramagnetic materials; Perpendicular magnetic anisotropy; Shape; Sputtering;
fLanguage
English
Journal_Title
Magnetics in Japan, IEEE Translation Journal on
Publisher
ieee
ISSN
0882-4959
Type
jour
DOI
10.1109/TJMJ.1991.4565107
Filename
4565107
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