Low-temperature electron mobility in Trigate SOI MOSFETs

Author

Colinge, Jean-Pierre ; Quinn, Aidan J. ; Floyd, Liam ; Redmond, Gareth ; Alderman, John C. ; Xiong, Weize ; Cleavelin, C. Rinn ; Schulz, Thomas ; Schruefer, Klaus ; Knoblinger, Gerhard ; Patruno, Paul

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of California, Davis, CA, USA

Volume

27

Issue

2

fYear

2006

Firstpage

120

Lastpage

122

Abstract

Evidence of one-dimensional subband formation is found at low temperature in trigate silicon-on-insulator MOSFETs, resulting in oscillations of the I_D(V_G) characteristics. These oscillations correspond to the filling of energy subbands by electrons as the gate voltage is increased. High mobility, reaching 1200 cm²/Vs, is measured in the subbands at T=4.4 K. Subband mobility decreases as temperature is increased. Conduction in subbands disappears for temperatures higher than 100 K or for drain voltage values that are significantly larger than kT/q.

Keywords

MOSFET; cryogenic electronics; electron mobility; quantum wires; semiconductor device measurement; silicon-on-insulator; 100 K; 1D subband formation; MOSFET; charge carrier mobility; cryogenic electronics; drain voltage value; gate voltage; low-temperature electron mobility; quantum wires; semiconductor device measurement; silicon-on-insulator technology; subband mobility; trigate SOI; Cryogenic electronics; Electron mobility; Etching; Filling; MOSFETs; Semiconductor device measurement; Semiconductor films; Silicon on insulator technology; Temperature; Voltage; Charge carrier mobility; MOSFETs; cryogenic electronics; quantum wires; semiconductor device measurements; silicon-on -insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.862691

Filename

1580601