Abnormal drain current (ADC) effect and its mechanism in FD SOI MOSFETs

Author

Yun, Jang-Gn ; Cristoloveanu, Sorin ; Bawedin, Maryline ; Flandre, Denis ; Lee, Hi-Deok

Author_Institution

Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon, South Korea

Volume

27

Issue

2

fYear

2006

Firstpage

123

Lastpage

126

Abstract

A new type of abnormal drain current (ADC) effect in fully depleted (FD) silicon-on-insulator (SOI) MOSFETs is reported. It is found that the drain current becomes abnormally large for specific front- and back-gate voltages. The drain current exhibits a transient effect due to the floating body behavior and no longer follows the conventional interface coupling theory for these specific front- and back-gate bias conditions. It is shown that the ADC can be generated by the combination of gate-induced drain leakage, transient effects, and parasitic bipolar transistor action in FD SOI MOSFETs.

Keywords

MOSFET; electric current; interface phenomena; silicon-on-insulator; tunnelling; abnormal drain current effect; band-to-band tunneling; band-to-defect tunneling; floating body effect; fully depleted SOI MOSFET; gate-induced drain leakage current; interface coupling; meta-stable dip effect; transient effect; Bipolar transistors; Coupling circuits; Integrated circuit technology; MOS devices; MOSFETs; Microelectronics; Silicon on insulator technology; Tunneling; Ultra large scale integration; Voltage; Abnormal drain current (ADC) effect; band-to-band (B-B) and band-to-defect (B-D) tunneling; floating body effect (FBE); fully depleted (FD) SOI MOSFETs; gate-induced drain leakage (GIDL) current; interface coupling; meta-stable dip (MSD) effect; transient effect;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2005.862684

Filename

1580602