• DocumentCode
    800791
  • Title

    Electron transit time through depletion layer of GaInAs pn junction

  • Author

    Smiljanic, M. ; Djuric, Z. ; Lazic, Zarko

  • Author_Institution
    Inst. for Chem., Technol. & Metall., Belgrade, Yugoslavia
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    150
  • Lastpage
    152
  • Abstract
    Using an empirical formula for the electron velocity, the transit time through a Ga0.47In0.53As pn junction as a function of the applied voltage and other parameters is calculated. It is shown that a minimum transit time exists and that it can be used for modelling of the response time of a pin or avalanche photodiode made on an epitaxial Ga0.47In0.53As layer on InP substrate.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; p-i-n diodes; p-n homojunctions; semiconductor device models; semiconductor epitaxial layers; Ga 0.47In 0.53As-InP; applied voltage; avalanche photodiode; depletion layer; electron transit time; electron velocity; empirical formula; minimum transit time; modelling; p-i-n photodiodes; p-n junctions; response time; semiconductor epitaxial layers; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890109
  • Filename
    14279
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=800791