Table-based nonlinear HEMT model extracted from time-domain large-signal measurements

Author

Currás-Francos, M. Carmen

Author_Institution

Dept. de Tecnologia Electron., Univ. of Vigo, Spain

Volume

53

Issue

5

fYear

2005

fDate

5/1/2005 12:00:00 AM

Firstpage

1593

Lastpage

1600

Abstract

This paper presents an empirical table-based nonlinear HEMT model fully extracted from time-domain large-signal measurements. A simple and direct extraction procedure, based on a vector nonlinear network analyzer measurement system with load-pull facilities, demonstrates by experimental results on microwave transistors how a very reduced number of measurements is enough to obtain the current and charge generators to fill a lookup model. Table-based model extraction, implementation, and validation are described in this paper.

Keywords

high electron mobility transistors; microwave transistors; semiconductor device measurement; semiconductor device models; MODFET; field-effect transistors; load-pull facilities; lookup model; measurement system; microwave transistors; nonlinear HEMT model; time-domain large-signal measurements; vector nonlinear network analyzer; Analytical models; Charge measurement; Current measurement; Data mining; HEMTs; Microwave FETs; Microwave measurements; Microwave transistors; Pulse measurements; Time domain analysis; Field-effect transistors (FETs); MODFETs; modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2005.847049

Filename

1427962