DocumentCode
801619
Title
125-GHz Diode Frequency Doubler in 0.13- 
CMOS
Author
Mao, Chuying ; Nallani, Chakravartula Shashank ; Sankaran, Swaminathan ; Seok, Eunyoung ; Kenneth, K.O.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL
Volume
44
Issue
5
fYear
2009
fDate
5/1/2009 12:00:00 AM
Firstpage
1531
Lastpage
1538
Abstract
The first mm-wave Schottky diode frequency doubler fabricated in CMOS is demonstrated. The doubler built in 130-nm CMOS uses a balanced topology with two shunt Schottky barrier diodes, and exhibits ~ 10-dB conversion loss as well as -1.5-dBm output power at 125 GHz. The input matching is better than -10 dB from 61 to 66 GHz. The rejection of fundamental signal at output is greater than 12 dB for input frequency from 61 to 66 GHz. The doubler can generate signals up to 140 GHz.
Keywords
CMOS integrated circuits; Schottky diodes; frequency multipliers; millimetre wave diodes; network topology; CMOS topology; conversion loss; frequency 125 GHz; mm-wave diode frequency doubler; shunt Schottky barrier diodes; size 0.13 mum; CMOS technology; Capacitance; Cathodes; Circuits; Cutoff frequency; Frequency conversion; Power generation; Schottky barriers; Schottky diodes; Topology; CMOS; Schottky barrier diode; doubler; frequency multiplication; millimeter wave; terahertz;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.2009.2016995
Filename
4907318
Link To Document