A 0.13 $\mu$ m CMOS Quad-Band GSM/GPRS/EDGE RF Transceiver Using a Low-Noise Fractional-N Frequency Synthesizer and Direct-Conversion A

This paper presents a single-chip CMOS quad-band (850/900/1800/1900 MHz) RF transceiver for GSM/GPRS/EDGE applications which adopts a direct-conversion receiver, a direct-conversion transmitter and a fractional-N frequency synthesizer with a built-in DCXO. In the GSM mode, the transmitter delivers 4 dBm of output power with 1deg RMS phase error and the measured phase noise is -164.5 dBc/Hz at 20 MHz offset from a 914.8 MHz carrier. In the EDGE mode, the TX RMS EVM is 2.4% with a 0.5 dB gain step for the overall 36 dB dynamic range. The RX NF and IIP3 are 2.7 dB/-12 dBm for the low bands (850/900 MHz) and 3 dB/-11 dBm for the high bands (1800/1900 MHz). This transceiver is implemented in 0.13 mum CMOS technology and occupies 10.5 mm². The device consumes 118 mA and 84 mA in TX and RX modes from 2.8 V, respectively and is housed in a 5 times 5 mm² 40-pin QFN package.