• DocumentCode
    80206
  • Title

    Performing Stateful Logic on Memristor Memory

  • Author

    Xuan Zhu ; Xuejun Yang ; Chunqing Wu ; Nong Xiao ; Junjie Wu ; Xun Yi

  • Author_Institution
    State Key Lab. of High Performance Comput., Nat. Univ. of Defense Technol., Changsha, China
  • Volume
    60
  • Issue
    10
  • fYear
    2013
  • fDate
    Oct. 2013
  • Firstpage
    682
  • Lastpage
    686
  • Abstract
    This brief proposes a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar. Through analysis and comparison of multiple schemes, achievable circuit condition is demonstrated, and the feasibility of the duplication operation is proved. The proposed circuit structure provides the memory with the function of in situ logic operation and thus can potentially reduce the amount of memory accessing actions and provide a possible solution to the memory wall problem.
  • Keywords
    integrated memory circuits; memristors; circuit structure; duplication operation; in situ logic operation; memory wall problem; memristor memory; nanocrossbar; stateful logic operation; Integrated circuit modeling; Materials; Mathematical model; Memory management; Memristors; Threshold voltage; Duplication; memory wall; memristor; nanocrossbar memory; stateful logic;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2013.2273837
  • Filename
    6578090