DocumentCode
80206
Title
Performing Stateful Logic on Memristor Memory
Author
Xuan Zhu ; Xuejun Yang ; Chunqing Wu ; Nong Xiao ; Junjie Wu ; Xun Yi
Author_Institution
State Key Lab. of High Performance Comput., Nat. Univ. of Defense Technol., Changsha, China
Volume
60
Issue
10
fYear
2013
fDate
Oct. 2013
Firstpage
682
Lastpage
686
Abstract
This brief proposes a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar. Through analysis and comparison of multiple schemes, achievable circuit condition is demonstrated, and the feasibility of the duplication operation is proved. The proposed circuit structure provides the memory with the function of in situ logic operation and thus can potentially reduce the amount of memory accessing actions and provide a possible solution to the memory wall problem.
Keywords
integrated memory circuits; memristors; circuit structure; duplication operation; in situ logic operation; memory wall problem; memristor memory; nanocrossbar; stateful logic operation; Integrated circuit modeling; Materials; Mathematical model; Memory management; Memristors; Threshold voltage; Duplication; memory wall; memristor; nanocrossbar memory; stateful logic;
fLanguage
English
Journal_Title
Circuits and Systems II: Express Briefs, IEEE Transactions on
Publisher
ieee
ISSN
1549-7747
Type
jour
DOI
10.1109/TCSII.2013.2273837
Filename
6578090
Link To Document