DocumentCode
803408
Title
Proton irradiation of EMCCDs
Author
Smith, David R. ; Ingley, Richard ; Holland, Andrew D.
Author_Institution
ISTA, Brunel Univ., Uxbridge, UK
Volume
53
Issue
2
fYear
2006
Firstpage
205
Lastpage
210
Abstract
This paper describes the irradiation of 95 electron multiplication charge coupled devices (EMCCDs) at the Paul Scherrer Institut (PSI) in Switzerland, to investigate the effects of proton irradiation on the operational characteristics of CCDs featuring electron multiplication technology for space use. This work was carried out in support of the CCD development for the radial velocity spectrometer (RVS) instrument of the European Space Agency´s cornerstone Gaia mission. Previous proton irradiations of EMCCDs, have shown the technology to be radiation hard to ∼10× the required six-year Gaia lifetime proton fluence, with no device failures or unexpected operational changes. The purpose of the study described in this paper was to further investigate the statistical probability of device failure as a result of radiation damage, the large number of devices and high proton fluence used, making the study equivalent to testing ∼50 complete RVS CCD focal planes to the expected end of life proton dose. An outline of the earlier EMCCD proton irradiations is given, followed by a detailed description of the proton irradiation and characterization of the 95 devices used in this latest study.
Keywords
charge-coupled devices; electron multipliers; proton effects; semiconductor device reliability; electron multiplication charge coupled devices; proton irradiation effects; radial velocity spectrometer instrument; radiation damage; six-year Gaia lifetime proton fluence; Charge coupled devices; Charge-coupled image sensors; Electrons; Instruments; Probability; Protons; Space charge; Space missions; Space technology; Spectroscopy; Charge coupled devices (CCD); Gaia; electron multiplication charge coupled devices (EMCCDs); proton irradiation; radial velocity spectrometer (RVS); radiation damage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2005.861730
Filename
1580855
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