Transient Ionizing Radiation Effects in MOS/LSI

Transient ionizing radiation effects data on six types of MOS/LSI devices are presented considering variations in the pulse width of the radiation environment and circuit design of the MOS/ LSI cell. Four of the device types employed dynamic logic cells and the other two were formed with static logic cells. Transient failure levels of the dynamic arrays occurred with exposure to a total radiation dose of 1-10 rads(Si) through a time as long as 5 ms. The static logic arrays demonstrated significant transient responses at radiation levels of 108 rads(Si)/s, or transient failure of stored information with exposure to a total radiation dose of 10-50 rads(Si).