A High Gain and Low Supply Voltage LNA for the Direct Conversion Application With 4-KV HBM ESD Protection in 90-nm RF CMOS

Author

Chang, Chieh-Pin ; Hou, Jian-An ; Su, Jionguang ; Chen, Chih-Wei ; Liou, Tsyr-Shyang ; Wong, Shyh-Chyi ; Wang, Yeong-Her

Author_Institution

Inst. of Microelectron., Nat. Cheng-Kung Univ., Tainan

Volume

16

Issue

11

fYear

2006

Firstpage

612

Lastpage

614

Abstract

A 2.4-GHz low noise amplifier (LNA) for the direct conversion application with high power gain, low supply voltage and plusmn4 KV human body model (HBM) electrostatic discharge (ESD) protection level implemented by a 90-nm RF CMOS technology is demonstrated. At 12.9 mA of current consumption with a supply voltage of 1.0 V, the LNA delivers a power gain of 21.9 dB and the noise figure (NF) of 3.2 dB, while maintaining the input and output return losses below -11 dB and -18.3 dB, respectively. The power gain and NF are only 0.2 dB lower and 0.64 dB higher than those of LNA without ESD protection

Keywords

CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; electrostatic discharge; low noise amplifiers; 1.0 V; 12.9 mA; 2.4 GHz; 21.9 dB; 3.2 dB; 90 nm; RF CMOS technology; electrostatic discharge protection level; human body model; low noise amplifier; CMOS technology; Electrostatic discharge; High power amplifiers; Low voltage; Low-noise amplifiers; Noise level; Noise measurement; Protection; Radio frequency; Radiofrequency amplifiers; CMOS; electrostatic discharge (ESD); low noise amplifier (LNA); noise figure (NF); radio frequency (RF);

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2006.884911

Filename

1717520