DocumentCode
804413
Title
Lithiun Driftability and Precipitation in Silicon
Author
Guislain, H.J. ; De Laet, L.H.
Author_Institution
Metallurgie Hoboken-Overpelt, Olen-Belgiun
Volume
19
Issue
1
fYear
1972
Firstpage
323
Lastpage
328
Abstract
Lithium mobility and precipitation were correlated with other electrical and IR-optical measurements on dislocation free crystals grown under special conditions in order to avoid vacancy clustering. It is shown that the classical expression of Pell, to derive the oxygen content, is no longer applicable to those crystals. The influence of annealing on the Li diffusion constant shows that vacancy supersaturation poisons these crystals or that the role of the different oxygen-configurations has to be reviewed.
Keywords
Annealing; Copper; Crystals; Detectors; Electric variables measurement; Equations; Lithium; Silicon; Spirals; Toxicology;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1972.4326526
Filename
4326526
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