• DocumentCode
    805750
  • Title

    A new approach to evaluation of hot-carrier lifetime of ring oscillator (RO)

  • Author

    Zhang, Jiong ; Chu, Shao-Fu Sanford

  • Author_Institution
    Conexant Syst. Inc., Newport Beach, CA, USA
  • Volume
    49
  • Issue
    9
  • fYear
    2002
  • fDate
    9/1/2002 12:00:00 AM
  • Firstpage
    1672
  • Lastpage
    1674
  • Abstract
    The paper presents a novel experimental method to evaluate AC hot-carrier lifetime of a ring oscillator (RO). By using a series of different stages of ring oscillators (DSROs), the new method allows one to maintain a constant frequency (f0) and obtain a closer value between pulse-to-pulse voltage (Vp-p) and bias condition throughout the RO lifetime testing. These two achievements eliminate the innate flaws in conventional RO hot-carrier test method. Hence, a more reliable AC lifetime of RO is expected
  • Keywords
    CMOS integrated circuits; carrier lifetime; hot carriers; integrated circuit reliability; integrated circuit testing; oscillators; AC hot-carrier lifetime evaluation; CMOS technology; hot-carrier testing; ring oscillator; CMOS technology; Circuits; Degradation; Frequency; Hot carriers; MOS devices; MOSFETs; Power supplies; Ring oscillators; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/TED.2002.802660
  • Filename
    1027864
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=805750