• DocumentCode
    806619
  • Title

    Further Studies on Implanted High Purity Germanium Detectors

  • Author

    Ponpon, J.P. ; Stuck, R. ; Siffert, P. ; Herzer, H. ; Kalbitzer, S.

  • Author_Institution
    Laboratoire de Physique des Rayonnements et d´´Electronique Nucleaire Centre de Recherches Nucleaires, Strasbourg-Cronenbourg, France
  • Volume
    19
  • Issue
    3
  • fYear
    1972
  • fDate
    6/1/1972 12:00:00 AM
  • Firstpage
    281
  • Lastpage
    288
  • Abstract
    Ion implantation and glow discharge methods have been utilized to produce boron rectifying contacts on high purity N-type germanium. The behaviour of both kinds of contact are discussed with respect to the damage density and annealing as measured by electrical and backscattering properties. Ohmic contacts were obtained by phosphorus implantation, lithium diffusion and metal evaporation. The counters have been investigated with nuclear radiations (¿, ß, ¿).
  • Keywords
    Annealing; Backscatter; Boron; Contacts; Density measurement; Detectors; Electric variables measurement; Germanium; Glow discharges; Ion implantation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1972.4326739
  • Filename
    4326739
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=806619