• DocumentCode
    807119
  • Title

    Power and efficiency limits in single-mirror light emitting diodes with enhanced intensity

  • Author

    Schubert, E. Fred ; Sivco, D.L. ; Cho, Andrew Y. ; Zydzik, G.J.

  • Volume
    28
  • Issue
    23
  • fYear
    1992
  • Firstpage
    2169
  • Lastpage
    2171
  • Abstract
    The principle of enhanced emission intensity in a single-mirror light emitting diode (LED) is demonstrated by placing an InGaAs multiquantum well active region in the antinode of the optical mode created by a nearby metallic mirror, thus enhancing emission along the optical axis by up to four times. Multiple-well LED structures exhibit enhanced efficiencies similar to that of a perfect isotropic emitter. The emission intensity of single-well LEDs is limited by band filling.
  • Keywords
    light emitting diodes; mirrors; semiconductor quantum wells; AG mirror; Al5O12; InGaAs multiquantum well active region; LED structures; MQW; efficiency limits; enhanced emission intensity; light emitting diodes; power limits; single-mirror;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19921392
  • Filename
    173021
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=807119