Design and fabrication of a p-i-n photodiode with high responsivity and large alignment tolerances for 40-gb/s applications

Author

Achouche, M. ; Magnin, V. ; Harari, J. ; Carpentier, D. ; Derouin, E. ; Jany, C. ; Decoster, D.

Author_Institution

Alcatel-Thales III-V Lab., Marcoussis

Volume

18

Issue

4

fYear

2006

Firstpage

556

Lastpage

558

Abstract

This letter demonstrates an evanescently coupled p-i-n photodiode combined with a multimode diluted waveguide using a simple all 2-in InP processing that includes on-wafer mirrors etching and antireflection coating. A high responsivity of 0.81 A/W at 1.55 mum with less than 0.4-dB polarization dependence and a large -1-dB vertical alignment tolerance of 2.70 mum were achieved simultaneously with a bandwidth of 47 GHz. Stable operation for over 1000 h was obtained under bias stress and temperature at 200degC

Keywords

antireflection coatings; etching; mirrors; optical design techniques; optical fabrication; optical receivers; optical waveguides; p-i-n photodiodes; semiconductor device reliability; 1.55 mum; 40 Gbit/s; InP processing; antireflection coating; bias stress; etching; evanescent coupling; multimode diluted waveguide; on-wafer mirrors; p-i-n photodiode; responsivity; vertical alignment tolerance; Bandwidth; Coatings; Etching; Fabrication; Indium phosphide; Mirrors; PIN photodiodes; Polarization; Stress; Temperature; Evanescent coupling; multimode waveguide; p-i-n photodiode (PD);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2005.863990

Filename

1583673