A Si bipolar 28-GHz dynamic frequency divider

Author

Kurisu, Masakazu ; Uemura, Gohiko ; Ohuchi, Masahiro ; Ogawa, Chihiro ; Takemura, Hisashi ; Morikawa, Takenori ; Tashiro, Tsutomu

Author_Institution

NEC Corp., Kanagawa, Japan

Volume

27

Issue

12

fYear

1992

fDate

12/1/1992 12:00:00 AM

Firstpage

1799

Lastpage

1804

Abstract

A dynamic frequency divider applying the regenerative frequency division principle has been developed. A spiral inductor on the silicon substrate used as a load is characterized, and an improved one-port model with the substrate resistance is discussed. A 1/16 frequency divider was implemented with a silicon bipolar technology with a cutoff frequency of 40 GHz. The operation frequency range was 11.8-28.1 GHz, covering the Ka band (18-26.5 GHz). The inductive load has improved the maximum operation frequency by 7%, compared with a conventional circuit. Complemented with a 21-GHz static frequency divider previously reported by the authors, the whole microwave frequency range up to 26.5 GHz has been completely covered with the silicon bipolar technology. The maximum operation frequency of a silicon MMIC has been extended to the millimeter-wave frequency region for the first time

Keywords

MMIC; bipolar integrated circuits; elemental semiconductors; frequency dividers; silicon; 1/16 frequency divider; 11.8 to 28.1 GHz; 40 GHz; Ka band; MMIC; Si substrate; bipolar technology; cutoff frequency; dynamic frequency divider; inductive load; microwave frequency range; millimeter-wave frequency; one-port model; operation frequency range; regenerative frequency division principle; spiral inductor; Circuits; Cutoff frequency; Frequency conversion; Inductors; MMICs; Microwave frequencies; Microwave technology; Millimeter wave technology; Silicon; Spirals;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.173108

Filename

173108