A Reliability Model for Low-Temperature Polycrystalline Silicon Thin-Film Transistors

Author

Chen, Chih-Yang ; Lee, Jam-Wem ; Lee, Po-Hao ; Chen, Wei-Cheng ; Lin, Hsiao-Yi ; Yeh, Kuan-Lin ; Ma, Ming-Wen ; Wang, Shen-De ; Lei, Tan-Fu

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

392

Lastpage

394

Abstract

We proposed here a reliability model that successfully introduces both the physical mechanisms of negative bias temperature instability (NBTI) and hot carrier stress (HCS) for p-channel low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs). The proposed model is highly matched with the experimental results, in which the NBTI dominates the device reliability at small negative drain bias while the HCS dominates the degradation at large negative drain bias. In summary, the proposed model provides a comprehensive way to predict the lifetime of the p-channel LTPS TFTs, which is especially necessary for the system-on-panel circuitry design

Keywords

semiconductor device reliability; silicon; thermal stability; thin film transistors; hot carrier stress; lifetime prediciton; low-temperature polycrystalline silicon thin-film transistors; negative bias temperature instability; p-channel; reliability model; Circuits; Degradation; Hot carriers; Negative bias temperature instability; Niobium compounds; Predictive models; Silicon; Stress; Thin film transistors; Titanium compounds; Hot carrier stress (HCS); low-temperature polycrystalline silicon thin-film transistors (LTPS TFTs); negative bias temperature instability (NBTI); reliability;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895454

Filename

4160010