Wideband dynamic numerical model of a tapered buried ridge stripe semiconductor optical amplifier gate

Author

Connelly, M.J.

Author_Institution

Dept. of Electron. & Comput. Eng., Limerick Univ., Ireland

Volume

149

Issue

3

fYear

2002

fDate

6/24/1905 12:00:00 AM

Firstpage

173

Lastpage

178

Abstract

A wideband dynamic numerical model of a tapered buried ridge stripe semiconductor optical amplifier is described. The model is based on a carrier density rate equation and a set of travelling-wave equations describing the amplified signal fields and spontaneous emission photon rates. These equations are solved in time and space using a computationally efficient numerical algorithm. The model is used to predict the switching properties of an optical gate. A simple equivalent circuit model of the gate, including package parasitics, is derived that can be used in conventional electrical circuit simulation tools

Keywords

carrier density; equivalent circuits; numerical analysis; optical communication equipment; optical switches; semiconductor device models; semiconductor device packaging; semiconductor optical amplifiers; spontaneous emission; amplified signal fields; carrier density rate equation; computationally efficient numerical algorithm; gate equivalent circuit model; optical gate; package parasitics; semiconductor optical amplifier; spontaneous emission photon rates; switching properties; tapered buried ridge stripe SOA; travelling-wave equations; wideband dynamic numerical model;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:20020323

Filename

1030091