Degradation of Laser-Crystallized Laterally Grown Poly-Si TFT under Dynamic Stress

Author

Liu, Po-Tsun ; Lu, Hau-Yan ; Chen, Yu-Cheng ; Chi, Sien

Author_Institution

Dept. of Photonics & Display Inst., Nat. Chiao Tung Univ., Hsinchu

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

401

Lastpage

403

Abstract

This letter studies the electrical degradation of laterally grown polycrystalline silicon thin-film transistors (poly-Si TFTs) under dynamic voltage stress. The experimental results show the serious electrical degradation of poly-Si TFTs with a protruding grain boundary. The concentration of the electric field in the protrusion region was verified by capacitance-voltage measurements and simulation of the device characteristics. These results reveal that more electrons are induced at the grain boundary of the poly-Si channel because of the relatively high electric field in the protrusion region. Based on these data, this letter proposes a model to explain the enhanced electrical degradation of poly-Si TFTs with a protruding grain boundary, generated by laser-crystallized lateral growth technique

Keywords

crystallisation; silicon; thin film transistors; capacitance-voltage measurements; dynamic voltage stress; electrical degradation; grain boundary; laser-crystallization; laterally grown poly-Si TFT; polycrystalline silicon thin-film transistors; Capacitance measurement; Capacitance-voltage characteristics; Degradation; Electric variables measurement; Electrons; Grain boundaries; Silicon; Stress; Thin film transistors; Voltage; Dynamic stress; poly-Si; protrusion grain boundary; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.895388

Filename

4160033