A Novel 700-V SOI LDMOS With Double-Sided Trench

Author

Luo, Xiaorong ; Zhang, Bo ; Li, Zhaoji ; Guo, Yufeng ; Tang, Xinwei ; Liu, Yong

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu

Volume

28

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

422

Lastpage

424

Abstract

A novel silicon-on-insulator (SOI) high-voltage device structure with double-sided trenches on the buried oxide layer (DT SOI) is proposed and its breakdown characteristics are investigated theoretically and experimentally in this letter. Theoretically, the charges implemented in the DTs, whose density changes with the drain voltage, increase the electric field in the buried layer and modulate the electric field in the drift region, which results in the enhancement of the breakdown voltage (BV). Experimentally, the BV of 730 V is obtained for the first time in SOI LDMOS with DT on 20-mum SOI layer and 1- mum buried oxide layer

Keywords

MIS devices; buried layers; electric breakdown; silicon-on-insulator; 700 V; SOI LDMOS; breakdown voltage; buried oxide layer; double-sided trench; high-voltage device structure; silicon-on-insulator; Breakdown voltage; Charge carrier processes; Electric breakdown; Electric potential; Silicon on insulator technology; Thin film devices; Breakdown voltage (BV); charge; double-sided trench (DT); electric field; modulate;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2007.894648

Filename

4160035