Carrier Mobility/Transport in Undoped-UTB DG FinFETs

Author

Chowdhury, Murshed M. ; Trivedi, Vishal P. ; Fossum, Jerry G. ; Mathew, Leo

Author_Institution

Freescale Semicond., Austin, TX

Volume

54

Issue

5

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

1125

Lastpage

1131

Abstract

A process/physics-based double-gate (DG) MOSFET model (UFDG), which includes a quantum-based carrier mobility model, is used to examine carrier transport in undoped ultrathin-silicon bodies/channels. The model predicts for {100}-surface devices, in accord with measurements, effective electron and hole mobilities that are dramatically higher than those in contemporary bulk-Si MOSFETs at the same integrated inversion-carrier density. Calibration of UFDG to undoped p- and n-channel DG FinFETs yields consistent results, showing very high mobilities in contemporary FinFETs, implying relatively smooth {110} fin-sidewall surfaces, and giving new insights on electron and hole mobilities in DG MOSFETs with {110} versus {100} surfaces. The calibrated model is used to simulate 17.5-nm DG FinFETs with midgap gates, predicting ballistic-like currents and, hence, suggesting that strained-Si channels are not needed for mobility enhancement in these nonclassical devices

Keywords

MOSFET; electron mobility; hole mobility; silicon; surface roughness; 17.5 nm; ballistic-limit current; bulk-silicon MOSFET; carrier mobility; carrier transport; double-gate MOSFET model; hole mobilities; surface roughness; ultrathin body; undoped ultrathin-silicon channels; undoped-UTB DG FinFET; Calibration; Charge carrier processes; Effective mass; Eigenvalues and eigenfunctions; Electron mobility; FinFETs; MOSFET circuits; Predictive models; Rough surfaces; Surface roughness; Ballistic-limit current; double-gate (DG) FinFET; mobility; nonclassical devices; surface roughness; ultrathin body;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.893669

Filename

4160095