High-speed single-quantum-well InGaAs/GaAs laser design and experiment

Author

Nagarajan, Radhakrishnan ; Fukushima, Tetsuya ; Bowers, John E. ; Geels, R.S. ; Coldren, Larry A.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2689

Lastpage

2690

Abstract

Summary form only given. The authors report damping factors an order of magnitude lower than previously reported for SQW lasers. They also report bandwidths of 15 GHz obtained in SQW (single quantum well) lasers as a result of proper design of the quantum-well structure. The laser samples were grown on (100) n-type GaAs by molecular beam epitaxy (MBE). The SQW lasers had a minimum broad area threshold of 125 A/cm². A self-aligned technique was used to fabricate the narrow-ridge waveguide lasers. The ridges were dry-etched using Cl₂. A model was developed that quantitatively explains the large enhancement in the dynamic response in the SQW lasers compared to those reported previously. This leads to an optimal design of quantum-well lasers for large-modulation bandwidths

Keywords

III-V semiconductors; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical waveguides; semiconductor growth; semiconductor junction lasers; (100) substrate; 15 GHz; Cl₂ dry etching; GaAs; InGaAs-GaAs; bandwidths; damping factors; dynamic response; high speed single quantum well lasers; large-modulation bandwidths; minimum broad area threshold; model; molecular beam epitaxy; narrow-ridge waveguide lasers; optimal design; self-aligned technique; Bandwidth; Damping; Gallium arsenide; Indium gallium arsenide; Laser modes; Molecular beam epitaxial growth; Optical design; Quantum well lasers; Semiconductor process modeling; Waveguide lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158697

Filename

158697