MSM waveguide photodetectors optimized for monolithic integration with high electron mobility transistors

Author

Leary, M.H. ; Ballantyne, J.M.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

13

Issue

7

fYear

1995

fDate

7/1/1995 12:00:00 AM

Firstpage

1514

Lastpage

1520

Abstract

This paper describes the design of two types of MSM photodetectors, one with interdigitated fingers running across a waveguide and one with electrodes running alongside the waveguide ridge. Both detectors employ the same layer structure as well-characterized high electron mobility transistors (HEMT´s) for ease of integration. Resistive loss at the electrode surface, radiation loss into the substrate, and scattering loss are all accounted for in the optimization for internal detection efficiency of these 50 GHz detectors

Keywords

HEMT integrated circuits; electrodes; integrated optoelectronics; light scattering; metal-semiconductor-metal structures; millimetre wave detectors; optical design techniques; optical losses; optical planar waveguides; optical waveguide components; optimisation; photodetectors; 50 GHz; 50 GHz detectors; MSM photodetector design; MSM waveguide photodetector optimisation; high electron mobility transistors; interdigitated fingers; internal detection efficiency; layer structure; monolithic integration; resistive loss; scattering loss; substrate; waveguide ridge; well-characterized high electron mobility transistors; Detectors; Electrodes; Electron mobility; Geometrical optics; HEMTs; MODFETs; Monolithic integrated circuits; Optical waveguides; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.400720

Filename

400720