DocumentCode
812309
Title
0.2-μm gate AlGaAs/GaAs HIGFET (heterostructure insulated gate FET) with a (111) face of n+-GaAs selectively grown by MOCVD
Author
Umemoto, Yuya ; Matsumoto, Hirokazu ; Hiruma, Kazuo ; Ohishi, Yasutake ; Oda, Hidekazu ; Takahama, M. ; Miyazaki, Moriyasu ; Imamura, Yusuke
Author_Institution
Hitachi Ltd., Tokyo
Volume
38
Issue
12
fYear
1991
fDate
12/1/1991 12:00:00 AM
Firstpage
2704
Abstract
Summary form only given. A GaAs HIGFET with a K value of 1 A/V2/mm has been developed for application to high-speed LSIs. A description is presented of the three essential processes for fabricating this HIGFET: (1) a gate process using a (111) face on selectively grown n+-GaAs, which is used to achieve a 0.2-μm gate and to reduce the short-channel effect; (2) a highly coped GaAs channel grown by MBE, which increases the K value; and (3) a technique for establishing side contact between the n+ -GaAs and the n-GaAs channel, which minimizes a source resistance
Keywords
III-V semiconductors; VLSI; aluminium compounds; field effect integrated circuits; gallium arsenide; insulated gate field effect transistors; integrated circuit technology; molecular beam epitaxial growth; vapour phase epitaxial growth; (111) GaAs; 0.2 micron; AlGaAs-GaAs; HIGFET; K value; MBE; MOCVD; fabrication; heterostructure insulated gate FET; high-speed LSIs; highly coped GaAs channel; selectively grown n+-GaAs; semiconductors; short channel effect reduction; side contact; source resistance minimisation; submicron; Annealing; Artificial intelligence; Capacitors; Contact resistance; Electrons; FETs; Gallium arsenide; Insulation; MOCVD; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.158727
Filename
158727
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