Comparison of performance and reliability between MOSFETs with LPCVD gate oxide and thermal gate oxide

Author

Ahn, Jeongseob ; Ting, Wei-Yuan ; Kwong, D.L.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX

Volume

38

Issue

12

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

2709

Lastpage

2710

Abstract

Summary form only given. The time-dependent dielectric breakdown (TDDB) characteristics and MOS properties and reliability of ultrathin (65-Å) LPCVD silicon oxides annealed in N₂ ambient have been studied and compared with those of thermal oxide of identical thickness. It is shown that the devices with CVD oxide have much lower defect densities and are less susceptible to interface state generation, charge trapping, and transconductance degradation than those with thermal oxide. The results indicate that CVD oxide is a promising candidate for future ULSI technology, for which reliable ultrathin gate dielectrics are required

Keywords

CVD coatings; dielectric thin films; electric breakdown of solids; insulated gate field effect transistors; reliability; semiconductor-insulator boundaries; 65 Å; CVD oxide; LPCVD gate oxide; MOS properties; MOSFET; N₂ ambient; ULSI technology; charge trapping; defect densities; interface state generation; reliability; reliable ultrathin gate dielectrics; thermal gate oxide; time-dependent dielectric breakdown; transconductance degradation; Degradation; Dry etching; MOSFETs; Optical films; Optical refraction; Optical variables control; Refractive index; Wavelength measurement; Wet etching; Wire;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.158737

Filename

158737