DocumentCode
812633
Title
Radiotracer Measurements of Sputtered Contamination Incurred during Ion Implantation Processing
Author
Masters, B.J.
Author_Institution
IBM System Products Division, East Fishkill Facility Hopewell Junction, New York 12533
Volume
20
Issue
3
fYear
1973
fDate
6/1/1973 12:00:00 AM
Firstpage
1032
Lastpage
1034
Abstract
Radioactive tracer measurements have been performed in order to establish limits for the degree of sputtered contamination to be expected during implantation processing in stainless steel target chambers. The information collected provides a useful set of working curves for the particular wafer-holding arrangement employed, and is presented in a form that should be convenient for use in the design of other stainless steel target-holder geometries.
Keywords
Contamination; Geometry; Impurities; Ion beams; Ion implantation; Pollution measurement; Radioactive materials; Silicon; Sputtering; Steel;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1973.4327318
Filename
4327318
Link To Document