Reliable Organic Nonvolatile Memory Device Using a Polyfluorene-Derivative Single-Layer Film

Author

Kim, Tae-Wook ; Oh, Seung-Hwan ; Choi, Hyejung ; Wang, Gunuk ; Hwang, Hyunsang ; Kim, Dong-Yu ; Lee, Takhee

Author_Institution

Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju

Volume

29

Issue

8

fYear

2008

Firstpage

852

Lastpage

855

Abstract

This letter describes the reversible switching performance of metal-organic-semiconductor (MOS) memory devices containing a polyfluorene-derivative single-layer film. The space-charge-limited current contributes to the switching behavior of WPF-oxy-F memory devices. The polyfluorene derivative reported here provides a significant advance to the field of organic semiconductors because it provides a type of organic memory material for nonvolatile memory devices. The following properties are responsible for its memory capabilities: its use of a single-layer film, a large on/off ratio (Ion/Ioff ~ 104), a long retention time (more than 10 000 s), acceptable thermal stability up to 120 degC, and an excellent device-to-device switching uniformity.

Keywords

MIS devices; MOS memory circuits; organic semiconductors; polymer films; random-access storage; semiconductor thin films; space charge; device-to-device switching uniformity; metal-organic-semiconductor memory devices; organic semiconductors; polyfluorene-derivative single-layer film; reliable organic nonvolatile memory device; reversible switching performance; space-charge-limited current; thermal stability; Materials science and technology; Nanoparticles; Nonvolatile memory; Organic electronics; Organic light emitting diodes; Organic materials; Power engineering and energy; Semiconductor films; Substrates; Thermal stability; Organic memory device; polyfluorene derivative; reversible switching;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2008.2000967

Filename

4571130