Modified 1.3 μm buried ridge stripe laser for implanted-FET integration

Author

Delorme, F. ; Kazmierski, C. ; Devoldere, P. ; Bouley, J.C.

Author_Institution

CNET, Bagneux, France

Volume

137

Issue

1

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

39

Lastpage

42

Abstract

The buried-ridge stripe (BRS) laser has been modified for integration purposes. Adapting the laser to a quasi-planar configuration on the semi-insulating substrate, the authors report on an important improvement of the integrable BRS laser characteristics as compared with previously published ones. Also, the technology for this modified structure is shown to be compatible with the implanted transistor technology. No significant effect on the laser characteristics has been seen after Si implantation and subsequent heat treatment at 850°C for 10 s. A threshold current as low as 9.5 mA and an optical bandwidth of 6.1 GHz have been obtained in the case of Si implantation carried out after laser fabrication

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optoelectronics; ion implantation; semiconductor junction lasers; 1.3 micron; 6.1 GHz; 9.5 mA; InGaAsP-InP; InP:Si; buried ridge stripe laser; heat treatment; implanted-FET integration; ion implantation; optical bandwidth; quasi-planar configuration; semi-insulating substrate; semiconductor laser; threshold current;

fLanguage

English

Journal_Title

Optoelectronics, IEE Proceedings J

Publisher

iet

ISSN

0267-3932

Type

jour

Filename

45771