• DocumentCode
    815967
  • Title

    Characterization of silver CPWs for applications in silicon MMICs

  • Author

    Levenets, V.V. ; Amaya, R.E. ; Tarr, N.G. ; Smy, T.J. ; Rogers, J.W.M.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • Volume
    26
  • Issue
    6
  • fYear
    2005
  • fDate
    6/1/2005 12:00:00 AM
  • Firstpage
    357
  • Lastpage
    359
  • Abstract
    High-Q broadband passives are needed for monolithic microwave circuits in silicon. Coplanar waveguides (CPWs) provide an effective way to implement passives in silicon monolithic microwave integrated circuits. Silver "fat" wires in the backend interconnects, used for CPW fabrication, will reduce the bulk resistive loss in metallization to the lowest possible level, which is vital to minimize noise. Electromigration, electrochemical migration, and agglomeration issues are not a problem for silver microwave passives, because of their coarse dimensions and the low current densities encountered in these structures. In this letter, Ag and Cu CPWs were designed, fabricated and tested. Silver CPWs showed a 2-3Ω/cm improvement in resistance over copper devices at 20GHz. A circuit was identified in which the application of silver passives could provide an improvement in noise performance.
  • Keywords
    MMIC; coplanar waveguides; copper; silicon; silver; 20 GHz; Ag; CPW fabrication; Cu; high-frequency measurement; microwave technology; monolithic microwave integrated circuits; semiconductor device fabrication; silicon MMIC; silver coplanar waveguides; silver microwave passives; transmission lines; Coplanar waveguides; Copper; Integrated circuit interconnections; MMICs; Microwave circuits; Microwave integrated circuits; Monolithic integrated circuits; Silicon; Silver; Wires; Conductivity; coplanar waveguides (CPWs); copper; high-frequency measurements; losses; microwave technology; monolithic microwave integrated circuits (MMICs); semiconductor device fabrication; silicon; silver; transmission lines;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2005.848120
  • Filename
    1432898