A study of the temperature sensitivity of GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers

Author

Dion, M. ; Li, Z.M. ; Ross, D. ; Chatenoud, F. ; Williams, R.L. ; Dick, S.

Author_Institution

Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

Volume

1

Issue

2

fYear

1995

fDate

6/1/1995 12:00:00 AM

Firstpage

230

Lastpage

233

Abstract

We have measured the temperature sensitivity, T₀, of GaAs-(Al,Ga)As, GRINSCH, multiple quantum-well (MQW) lasers with different numbers of quantum wells ranging from one to ten. Our data suggests that there is an optimum number of wells, namely five, where T ₀ is highest. Using a temperature-dependent model based on drift-diffusion equations, we have systematically analyzed the temperature sensitivity of a MQW GaAs-(Al, Ga)As laser. The T₀ versus well-number behavior observed experimentally is verified, and the important temperature-dependent factors are identified

Keywords

III-V semiconductors; aluminium compounds; diffusion; gallium arsenide; gradient index optics; laser theory; quantum well lasers; semiconductor device models; sensitivity; GRINSCH; GaAs-(Al,Ga)As multiple quantum-well GRINSCH lasers; GaAs-AlGaAs; MQW lasers; drift-diffusion equations; multiple quantum-well; optimum number; quantum well number; temperature sensitivity; temperature-dependent factors; temperature-dependent model; well-number behavior; Gallium arsenide; Laser modes; Laser theory; Quantum well devices; Quantum well lasers; Semiconductor lasers; Solid state circuits; Temperature measurement; Temperature sensors; Waveguide lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/2944.401201

Filename

401201