Epitaxial Graphene Transistors on SiC Substrates

Author

Kedzierski, Jakub ; Hsu, Pei-Lan ; Healey, Paul ; Wyatt, Peter W. ; Keast, Craig L. ; Sprinkle, Mike ; Berger, Claire ; de Heer, Walt A.

Author_Institution

Lincoln Lab., Massachusetts Inst. of Technol, Lexington, MA

Volume

55

Issue

8

fYear

2008

Firstpage

2078

Lastpage

2085

Abstract

This paper describes the behavior of top-gated transistors fabricated using carbon, specifically epitaxial graphene on SiC, as the active material. Although graphene devices have been built before, in this paper, we provide the first demonstration and systematic evaluation of arrays of a large number of transistors produced using standard microelectronics methods. The graphene devices presented feature high-k dielectric, mobilities up to 5000 cm²/Vldr s, and I_on/I_off ratios of up to seven, and are methodically analyzed to provide insight into the substrate properties. Typical of graphene, these micrometer-scale devices have negligible band gaps and, therefore, large leakage currents.

Keywords

carbon; carrier mobility; dielectric materials; nanostructured materials; transistors; C; SiC; SiC substrates; carrier mobility; epitaxial graphene transistors; graphene devices; high-k dielectric; leakage currents; micrometer-scale devices; standard microelectronics; top-gated transistors; transistor arrays; Carbon nanotubes; Dielectric materials; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Laboratories; Leakage current; Photonic band gap; Silicon carbide; Thin film transistors; $hbox{HfO}_{2}$ dielectric; Carbon devices; SiC; carbon transistors; epitaxial graphene; graphene; graphene devices; graphene transistors; high mobility; high- $k$ dielectric; semimetal; thin-film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.926593

Filename

4578855