• DocumentCode
    816458
  • Title

    Class D voltage-switching MOSFET power amplifier

  • Author

    Kazimierczuk, M.K.

  • Author_Institution
    Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
  • Volume
    138
  • Issue
    6
  • fYear
    1991
  • fDate
    11/1/1991 12:00:00 AM
  • Firstpage
    285
  • Lastpage
    296
  • Abstract
    An analysis of a class D voltage-switching tuned power amplifier is given, along with experimental results. Analytical equations are derived for performance parameters at any operating frequency normalised with respect to the resonant frequency and at any load resistance normalised with respect to the characteristic impedance of the resonant circuit. The analysis is carried out under the high loaded quality factor assumption, using Fourier series techniques. The behaviour of power MOSFETs in class D circuits for both capacitive and inductive loads is discussed in detail. It is shown that the operation above the resonant frequency (an inductive load) is preferred. The theoretical results were in good agreement with measured circuit performance parameters. The equations provide easy-to-use design tools, which can find a broad application, e.g. in designing DC/DC resonant converters and DC/AC inverters
  • Keywords
    Fourier analysis; insulated gate field effect transistors; power amplifiers; switching circuits; DC/AC inverters; DC/DC resonant converters; Fourier series techniques; MOSFET power amplifier; capacitive loads; class D; inductive loads; load resistance; performance parameters; resonant frequency; voltage-switching tuned power amplifier;
  • fLanguage
    English
  • Journal_Title
    Electric Power Applications, IEE Proceedings B
  • Publisher
    iet
  • ISSN
    0143-7038
  • Type

    jour

  • Filename
    103241