DocumentCode
816458
Title
Class D voltage-switching MOSFET power amplifier
Author
Kazimierczuk, M.K.
Author_Institution
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
Volume
138
Issue
6
fYear
1991
fDate
11/1/1991 12:00:00 AM
Firstpage
285
Lastpage
296
Abstract
An analysis of a class D voltage-switching tuned power amplifier is given, along with experimental results. Analytical equations are derived for performance parameters at any operating frequency normalised with respect to the resonant frequency and at any load resistance normalised with respect to the characteristic impedance of the resonant circuit. The analysis is carried out under the high loaded quality factor assumption, using Fourier series techniques. The behaviour of power MOSFETs in class D circuits for both capacitive and inductive loads is discussed in detail. It is shown that the operation above the resonant frequency (an inductive load) is preferred. The theoretical results were in good agreement with measured circuit performance parameters. The equations provide easy-to-use design tools, which can find a broad application, e.g. in designing DC/DC resonant converters and DC/AC inverters
Keywords
Fourier analysis; insulated gate field effect transistors; power amplifiers; switching circuits; DC/AC inverters; DC/DC resonant converters; Fourier series techniques; MOSFET power amplifier; capacitive loads; class D; inductive loads; load resistance; performance parameters; resonant frequency; voltage-switching tuned power amplifier;
fLanguage
English
Journal_Title
Electric Power Applications, IEE Proceedings B
Publisher
iet
ISSN
0143-7038
Type
jour
Filename
103241
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