• DocumentCode
    816490
  • Title

    Radiation characteristics of epitaxial CaF2 on silicon

  • Author

    Nishioka, Yasushiro ; Cho, Chih-Chen ; Summerfelt, Scott R. ; Gnade, Bruce E. ; Brown, George A.

  • Author_Institution
    Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA
  • Volume
    38
  • Issue
    6
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    1265
  • Lastpage
    1270
  • Abstract
    The radiation characteristics of a Al/CaF2/Si capacitor have been investigated. The single-crystal CaF2 film has been grown on Si(111) at a temperature as low as 300°C by molecular beam epitaxy (MBE). Previous studies showed that CaF2 films grown on Si(111) above 500°C exhibited flat C-V curves, suggesting a pinned CaF2/Si(111) interface. However, the authors have been able to obtain unpinned C-V curves from as-deposited CaF2 films grown at 300°C. The generation of positive charges and interface traps after X-ray irradiation is smaller in the CaF2 capacitor than in a similar SiO2 capacitor and it is comparable to a radiation hardened SiO2 capacitor
  • Keywords
    X-ray effects; capacitors; epitaxial layers; metal-insulator-semiconductor devices; molecular beam epitaxial growth; radiation hardening (electronics); semiconductor-insulator boundaries; 300 C; Al-CaF2-Si capacitor; CaF2; CaF2 capacitor; MBE; Si(111); X-ray irradiation; epitaxial CaF2; generation of positive charges; interface traps; molecular beam epitaxy; radiation characteristics; single-crystal CaF2 film; unpinned C-V curves; Annealing; Capacitance-voltage characteristics; Instruments; Laboratories; Lithography; MOS capacitors; Molecular beam epitaxial growth; Semiconductor films; Silicon; Temperature;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.124103
  • Filename
    124103
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=816490