Bidirectional Optical Interconnection at Gb/s Data Rates With Monolithically Integrated VCSEL-MSM Transceiver Chips

Author

Stach, Martin ; Rinaldi, Fernando ; Chandran, Manikandan ; Lorch, Steffen ; Michalzik, Rainer

Author_Institution

Dept. of Optoelectronics, Ulm Univ.

Volume

18

Issue

22

fYear

2006

Firstpage

2386

Lastpage

2388

Abstract

We present the operation characteristics of 850-nm wavelength GaAs-based monolithically integrated transceiver chips designed for low-cost short-distance bidirectional optical data transmission over a butt-coupled 200-mum core diameter polymer-clad silica fiber. The chips containing a vertical-cavity surface-emitting laser and a large-area metal-semiconductor-metal photodiode can well handle data rates of 2.5Gb/s in back-to-back mode and 0.5 Gb/s for 10-m fiber length

Keywords

metal-semiconductor-metal structures; optical communication equipment; optical interconnections; photodiodes; surface emitting lasers; transceivers; 0.5 Gbit/s; 10 m; 2.5 Gbit/s; 200 mum; 850 nm; VCSEL-MSM transceiver chips; bidirectional optical interconnection; metal-semiconductor-metal photodiode; polymer-clad silica fiber; vertical-cavity surface-emitting laser; Data communication; Fiber lasers; Integrated optics; Optical design; Optical interconnections; Optical polymers; Optical surface waves; Silicon compounds; Transceivers; Vertical cavity surface emitting lasers; Bidirectional; metal–semiconductor–metal photodiode (MSM PD); monolithic integration; transceiver; vertical-cavity surface-emitting laser (VCSEL);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.885635

Filename

4012070