• DocumentCode
    817095
  • Title

    Electron Irradiated Bulk n-Type GaAs

  • Author

    Mattauch, Robert J. ; Healy, Michael P.

  • Author_Institution
    Department of Electrical Engineering University of Virginia Charlottesville, Virginia 22901
  • Volume
    22
  • Issue
    1
  • fYear
    1975
  • Firstpage
    825
  • Lastpage
    828
  • Abstract
    Bulk boat grown gallium arsenide doped to 1.7 × 1016 cm-3 with silicon was irradiated with 7 MeV electrons until the sample resistivity rose to the range 106 to 108 ohm-cm. Both resistivity versus temperature and Hall-effect versus temperature data indicate the presence of an acceptor-like level at Ec - .31 eV. Carrier removal was found to be approximately 2.3 × 10-3 cm-l and annealing was found to occur near 500 K.
  • Keywords
    Annealing; Boats; Conductivity; Electrons; Gallium arsenide; Laboratories; Radiation effects; Silicon; Temperature measurement; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1975.4327753
  • Filename
    4327753
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=817095