Bulk traps in ultrathin SIMOX MOSFET´s by current DLTS

Author

McLarty, Peter K. ; Ioannou, Dimitris E. ; Colinge, Jean-Pierre

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

9

Issue

10

fYear

1988

Firstpage

545

Lastpage

547

Abstract

Bulk traps in very thin ( approximately 100-nm) SIMOX films have been studied by applying current deep-level transient spectroscopy (DLTS) to fully depleted, enhancement MOS transistors, fabricated in these films. The effect of states at both the front and back SiO/sub 2/-Si interfaces is eliminated by suitable biasing. Using this technique, a bulk trap with energy level 0.44 eV above the valence-band edge, capture cross section approximately 10/sup -17/ cm/sup 2/, and concentration approximately 10/sup 15/ cm/sup -3/, which is believed to be due to iron contamination, has been identified.<>

Keywords

deep level transient spectroscopy; electron traps; field effect integrated circuits; hole traps; insulated gate field effect transistors; integrated circuit testing; semiconductor device testing; 100 nm; DLTS; Fe; Fe contamination; MOSFET; SIMOX films; SiO/sub 2/-Si interfaces; biasing; bulk trap; deep-level transient spectroscopy; enhancement MOS transistors; ultrathin films; Capacitance; Degradation; Electrons; Epitaxial layers; Fabrication; MOSFET circuits; Semiconductor films; Single event upset; Spectroscopy; Substrates;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.17839

Filename

17839