The role of secondary defects in the loss of energy resolution of fast-neutron-irradiated HPGe gamma-ray detectors

Author

Fourches, N. ; Huck, A. ; Walter, G.

Author_Institution

Centre de Recherches Nucl., Univ. Louis Pasteur, Strasbourg, France

Volume

38

Issue

6

fYear

1991

fDate

12/1/1991 12:00:00 AM

Firstpage

1728

Lastpage

1735

Abstract

The resolution characteristics of high-purity germanium gamma-ray detectors irradiated with fast neutrons are studied in detail. The influence of the neutron fluence on the energy resolution as well as the annealing temperature of irradiated detectors is investigated. Similarities are observed between the annealing behavior of the defects created by fast neutron irradiation in high-purity germanium and the changes in the energy resolution of the detectors when they are annealed. The energy resolution of the detectors measured by means of a resolution factor which takes into account tailing effects has been investigated. Its behavior has been illustratively explained by the differences between the respective roles of the stable defects at low temperature (<100 K) and those formed by a thermal treatment up to room temperature

Keywords

crystal defects; gamma-ray detection and measurement; germanium; neutron effects; semiconductor counters; Ge; annealing temperature; defects; energy resolution; fast neutrons; gamma-ray detectors; irradiated detectors; neutron fluence; tailing effects; Annealing; Energy measurement; Energy resolution; Gamma ray detection; Gamma ray detectors; Germanium; Lattices; Neutrons; Temperature; Thermal degradation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.124169

Filename

124169