Simulation analysis of the bipolar amplification induced by heavy-ion irradiation in double-gate MOSFETs

Author

Castellani-Coulié, K. ; Munteanu, D. ; Autran, J.L. ; Ferlet-Cavrois, V. ; Paillet, P. ; Baggio, J.

Author_Institution

UMR CNRS, Univ. de Provence, Marseille, France

Volume

52

Issue

6

fYear

2005

Firstpage

2137

Lastpage

2143

Abstract

The sensitivity to heavy ions of double-gate (DG) transistors is evaluated by numerical simulation and extensively compared with the response of single-gate (SG) partially-depleted and fully-depleted SOI devices. The study of bipolar amplification versus LET and track location shows that DG are less sensitive than SG with similar structure parameters. Moreover, in order to understand the downscaling impact on the DG sensitivity to heavy ions, the influence on the bipolar gain of various electrical and geometrical structure parameters is thoroughly analyzed.

Keywords

MOSFET; ion beam effects; semiconductor device measurement; semiconductor device models; LET; bipolar amplification; bipolar gain; double gate sensitivity; double-gate MOSFET; double-gate transistor; downscaling impact; electrical parameter; geometrical structure parameter; heavy-ion irradiation; numerical simulation; track location; Analytical models; Doping; Electrodes; Electrostatics; Fluctuations; MOSFETs; Numerical simulation; Radiation hardening; Semiconductor films; Silicon; Bipolar gain; MOSFET; double-gate transistor; single-gate SOI transistor;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860680

Filename

1589174