Neutron and proton-induced single event upsets in advanced commercial fully depleted SOI SRAMs

Author

Baggio, J. ; Ferlet-Cavrois, V. ; Lambert, D. ; Paillet, P. ; Wrobel, F. ; Hirose, K. ; Saito, H. ; Blackmore, E.W.

Author_Institution

CEA-DIF, France

Volume

52

Issue

6

fYear

2005

Firstpage

2319

Lastpage

2325

Abstract

The SEU sensitivity of 0.2 μm fully depleted silicon on ensulator (FD-SOI) devices to proton and neutron irradiations is investigated in a large energy range (14-500 MeV). The comparison to bulk devices with similar gate lengths shows an improvement of a factor of 50 with the presence of body ties. Monte Carlo simulations were performed to confirm that the low sensitivity of FD-SOI is mainly due to the reduced sensitive volume. These results were extrapolated to deca-nanometric technologies to predict the behavior of advanced SOI processes. We found that fully depleted devices will be far less sensitive than partially depleted technologies to the terrestrial radiative environment.

Keywords

Monte Carlo methods; SRAM chips; neutron effects; proton effects; sensitivity analysis; silicon-on-insulator; 14 to 500 MeV; Monte Carlo simulations; SEU sensitivity; advanced commercial fully depleted SOI SRAMs; deca-nanometric technologies; gate lengths; neutron irradiations; neutron-induced Single Event Upsets; partially depleted technologies; proton irradiations; proton-induced Single Event Upsets; reduced sensitive volume; terrestrial radiative environment; Aerospace electronics; Extraterrestrial measurements; Helium; Neutrons; Protons; Random access memory; Silicon on insulator technology; Single event transient; Single event upset; Space technology; Neutron; SEU; SOI; SRAM; proton;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860722

Filename

1589202