Estimation of low-dose-rate degradation on bipolar linear integrated circuits using switching experiments

Author

Boch, J. ; Saigné, F. ; Schrimpf, R.D. ; Vaillé, J.R. ; Dusseau, L. ; Ducret, S. ; Bernard, M. ; Lorfèvre, E. ; Chatry, C.

Author_Institution

Univ. de Montpellier, France

Volume

52

Issue

6

fYear

2005

Firstpage

2616

Lastpage

2621

Abstract

The low-dose-rate response of five bipolar integrated circuits is evaluated on the basis of switching experiments. Such experiments consist of performing first a high-dose-rate irradiation followed by a low-dose-rate irradiation. Based on these experiments, a time-saving method to predict the low-dose-rate degradation of bipolar linear microcircuits is proposed. This approach provides a good estimate of the low-dose-rate degradation.

Keywords

bipolar integrated circuits; dosimetry; radiation effects; switching; bipolar linear integrated circuits; bipolar linear microcircuits; high-dose-rate irradiation; low-dose-rate degradation; low-dose-rate irradiation; switching experiments; Analog integrated circuits; Bipolar integrated circuits; Degradation; Integrated circuit technology; Lead compounds; Region 1; Shape; Space technology; Switches; Switching circuits; Bipolar technology; dose rate; enhanced low-dose-rate sensitivity (ELDRS); integrated circuit; switching experiment; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2005.860711

Filename

1589247