DocumentCode
820635
Title
Hole Transport in MOS Oxides
Author
Hughes, R.C. ; EerNisse, E.P. ; Stein, H.J.
Author_Institution
Sandia Laboratories, Albuquerque, New Mexico 87115
Volume
22
Issue
6
fYear
1975
Firstpage
2227
Lastpage
2233
Keywords
Charge carrier processes; Electron beams; Electron mobility; Electron traps; Ion implantation; Laboratories; Motion detection; Photoconductivity; Pulse generation; Temperature;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.1975.4328110
Filename
4328110
Link To Document