DocumentCode
821423
Title
Magnetization and magnetoresistance of Co/Cu layered films
Author
McGuire, T.R. ; Plaskett, T.S.
Author_Institution
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
28
Issue
5
fYear
1992
fDate
9/1/1992 12:00:00 AM
Firstpage
2748
Lastpage
2750
Abstract
Multilayer Co/Cu and sandwich layer Co/Cu/Co films made by magnetron sputtering using no special layering elements give the oscillatory magnetic coupling and magnetoresistance (MR) previously reported. The largest value with MR 80% is for a Co(10 Å)/Cu(10 Å) multilayer 340 Å thick. The increase of resistivity in small magnetic fields is the source of the MR. The MR is small in the sandwich layer films until Cu thicknesses above 23 Å where values of MR are 11% and the magnetic hysteresis loops show structure. The MR is isotropic within ±1% except for demagnetization. The authors prefer a model where the interface disorder is responsible for the large change in resistivity by restricting the conduction electron mean free path
Keywords
cobalt; copper; magnetic multilayers; magnetic thin films; magnetoresistance; sputtered coatings; 10 to 340 A; Co-Cu multilayers; interface disorder; magnetoresistance; magnetron sputtering; model; oscillatory magnetic coupling; sandwich layer; Conductivity; Couplings; Demagnetization; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic multilayers; Magnetization; Magnetoresistance; Sputtering;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/20.179616
Filename
179616
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