• DocumentCode
    821423
  • Title

    Magnetization and magnetoresistance of Co/Cu layered films

  • Author

    McGuire, T.R. ; Plaskett, T.S.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    28
  • Issue
    5
  • fYear
    1992
  • fDate
    9/1/1992 12:00:00 AM
  • Firstpage
    2748
  • Lastpage
    2750
  • Abstract
    Multilayer Co/Cu and sandwich layer Co/Cu/Co films made by magnetron sputtering using no special layering elements give the oscillatory magnetic coupling and magnetoresistance (MR) previously reported. The largest value with MR 80% is for a Co(10 Å)/Cu(10 Å) multilayer 340 Å thick. The increase of resistivity in small magnetic fields is the source of the MR. The MR is small in the sandwich layer films until Cu thicknesses above 23 Å where values of MR are 11% and the magnetic hysteresis loops show structure. The MR is isotropic within ±1% except for demagnetization. The authors prefer a model where the interface disorder is responsible for the large change in resistivity by restricting the conduction electron mean free path
  • Keywords
    cobalt; copper; magnetic multilayers; magnetic thin films; magnetoresistance; sputtered coatings; 10 to 340 A; Co-Cu multilayers; interface disorder; magnetoresistance; magnetron sputtering; model; oscillatory magnetic coupling; sandwich layer; Conductivity; Couplings; Demagnetization; Magnetic fields; Magnetic films; Magnetic hysteresis; Magnetic multilayers; Magnetization; Magnetoresistance; Sputtering;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.179616
  • Filename
    179616