• DocumentCode
    822078
  • Title

    Transitions between intra-wall structures in Permalloy thin film

  • Author

    Guo, Yi-Min ; Zhu, Jian-Gang

  • Author_Institution
    Dept. of Electr. Eng., Minnesota Univ., Minneapolis, MN, USA
  • Volume
    28
  • Issue
    5
  • fYear
    1992
  • fDate
    9/1/1992 12:00:00 AM
  • Firstpage
    2919
  • Lastpage
    2921
  • Abstract
    Magnetization structures of the two-dimensional 180° domain walls in Permalloy thin films are studied by numerical micromagnetic simulation. It is found that, in a film with a thickness between 300 and 500 Å, both the LaBonte and the Neel wall structures are energetically stable. Transitions between the two stable wall structures are studied by applying a square pulse field in the film plane and perpendicular to the wall. It is found that the transition from the LaBonte wall structure to the Neel wall structure essentially depends on the area of the field pulse. The results also show that a significant domain wall displacement is associated with the transition from the LaBonte wall structure to the Neel wall structure. It is argued that the transitions between the wall structures could change the local pinning environment and cause unexpected wall motion
  • Keywords
    Permalloy; ferromagnetic properties of substances; magnetic domain walls; magnetic thin films; LaBonte wall structure; Neel wall structures; Permalloy thin film; domain wall displacement; local pinning environment; magnetic film; magnetisation structures; micromagnetic simulation; square pulse field; transitions between intra-wall structures; wall motion; Anisotropic magnetoresistance; Damping; Equations; Magnetic domain walls; Magnetic films; Magnetic properties; Micromagnetics; Numerical simulation; Saturation magnetization; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.179672
  • Filename
    179672