An Analytical Model for Tunnel Barrier Modulation in Triple Metal Double Gate TFET

Author

Bagga, Navjeet ; Sarkar, Subir Kumar

Author_Institution

Dept. of Electron. & Telecommun. Eng., Jadavpur Univ., Kolkata, India

Volume

62

Issue

7

fYear

2015

fDate

Jul-15

Firstpage

2136

Lastpage

2142

Abstract

An analytical model for tunnel barrier modulation in triple metal double gate tunnel FET is presented for the first time in this paper. Three different metals over the channel region assist to form a barrier in the channel which restricts the reverse tunneling of the carrier, i.e., tunneling from drain to source. The choice of three metals with different work functions helps to increase the ON-current and also to form a barrier in the channel, which reduces the OFF-current. The surface potential and the electric field are analytically modeled by solving 2-D Poisson´s equation and Kane´s model is used to calculate the tunneling current. The analytical results are verified with SILVACO ATLAS simulated results.

Keywords

Poisson equation; field effect transistors; semiconductor device models; tunnel transistors; tunnelling; 2D Poisson equation; Kane model; barrier formation; channel region; electric field; surface potential; triple metal double gate TFET; tunnel barrier modulation; Analytical models; Electric potential; Junctions; Logic gates; Metals; Modulation; Tunneling; Ambipolar behavior; Poisson´s equation; Poisson???s equation; band-to-band tunneling; tunnel FET (TFET); work function; work function.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2015.2434276

Filename

7115087