• DocumentCode
    823079
  • Title

    Radiation Effects on Low Power Schottky Digital Integrated Circuits

  • Author

    Cooper, M.S.

  • Author_Institution
    GTE Sylvania 77 "A" Street Needham Heights, Ma. 02194
  • Volume
    23
  • Issue
    1
  • fYear
    1976
  • Firstpage
    853
  • Lastpage
    859
  • Abstract
    Typical low power Schottky integrated circuits were exposed to two standard radiation environments to obtain characteristic radiation response in comparison to standard TTL. The neytron levels were 1.9×1012 and 2.1×1013 neutron/cm2 (Californium-252 spectrum). The gamma dose rates were 7×109 to 3.8×1010 rads(Si/sec (100 nanosecond pulse width). Neutron response was minimal - ß degraded less than 10%, other parameters shifted less than 5%. Photocurrents were roughly 50 to 100% higher than the standard TTL. Results indicate that LS series IC´s were at least as neutron hard as typical standard TTL devices but may fail at a factor of 2 to 10 times lower gamma dose rate.
  • Keywords
    Digital integrated circuits; Gold; Logic devices; Military standards; Neutrons; Photoconductivity; Power dissipation; Radiation effects; Space vector pulse width modulation; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.1976.4328355
  • Filename
    4328355