• DocumentCode
    824724
  • Title

    Electrical feedback and its network analysis for linewidth reduction of a semiconductor laser

  • Author

    Ohtsu, M. ; Tabuchi, Noboru

  • Author_Institution
    Tokyo Inst. of Technol., Yokohama, Japan
  • Volume
    6
  • Issue
    3
  • fYear
    1988
  • fDate
    3/1/1988 12:00:00 AM
  • Firstpage
    357
  • Lastpage
    369
  • Abstract
    The center frequency of the field spectrum of a 1.5-μm InGaAsP distributed-feedback laser was stabilized by negative electrical feedback. The resultant residual frequency fluctuation was σ=3.6×10-11 for an integration time of 10 s. The linewidth of the field spectrum was simultaneously reduced by using another electrical feedback loop. Its minimum value was 360 kHz, which was 1/27 that of the free-running condition. This linewidth was narrower than the one determined by the magnitude of the spontaneous emission of the free-running laser. The field spectrum was very stable, and the value of the linewidth was constant for more than 40 h. Network analysis was carried out to realize further reductions of the linewidth
  • Keywords
    III-V semiconductors; distributed feedback lasers; feedback; gallium arsenide; gallium compounds; indium compounds; network analysis; semiconductor junction lasers; spectral line breadth; 1.5 micron; 10 s; 360 Hz; InGaAsP; InGaAsP distributed-feedback laser; field spectrum; free-running laser; frequency fluctuation; integration time; linewidth reduction; negative electrical feedback; network analysis; semiconductor laser; spontaneous emission; Atom optics; Fiber lasers; Frequency; Laser feedback; Laser noise; Laser stability; Low-frequency noise; Optical feedback; Semiconductor device noise; Semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/50.4013
  • Filename
    4013